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MT49H16M18SJ-25:B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc.

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MT49H16M18SJ-25:B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc.

Name: MT49H16M18SJ25B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc
Brand: Micron Technology Inc.
Price: 1 USD

Brand Name : Micron Technology Inc.

Model Number : MT49H16M18SJ-25:B TR

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : DRAM

Memory Size : 288Mbit

Memory Organization : 16M x 18

Memory Interface : Parallel

Clock Frequency : 400 MHz

Write Cycle Time - Word, Page : -

Access Time : 20 ns

Voltage - Supply : 1.7V ~ 1.9V

Operating Temperature : 0°C ~ 95°C (TC)

Mounting Type : Surface Mount

Package / Case : 144-TFBGA

Supplier Device Package : 144-FBGA (18.5x11)

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Product Details

GENERAL DESCRIPTION

The Micron® 256Mb Reduced Latency DRAM (RLDRAM) contains 8 banks x32Mb of memory accessible with 32-bit or 16-bit I/Os in a double data rate (DDR) format where the data is provided and synchronized with a differential echo clock signal. RLDRAM does not require row/column address multiplexing and is optimized for fast random access and high-speed bandwidth.
RLDRAM is designed for communication data storages like transmit or receive buffers in telecommunication systems as well as data or instruction cache applications requiring large amounts of memory.

FEATURES

• 2.5V VEXT, 1.8V VDD, 1.8V VDDQ I/O
• Cyclic bank addressing for maximum data out bandwidth
• Non-multiplexed addresses
• Non-interruptible sequential burst of two (2-bit
prefetch) and four (4-bit prefetch) DDR
• Target 600 Mb/s/p data rate
• Programmable Read Latency (RL) of 5-8
• Data valid signal (DVLD) activated as read data is available
• Data Mask signals (DM0/DM1) to mask first and
second part of write data burst
• IEEE 1149.1 compliant JTAG boundary scan
• Pseudo-HSTL 1.8V I/O Supply
• Internal Auto Precharge
• Refresh requirements: 32ms at 100°C junction
temperature (8K refresh for each bank, 64K refresh
command must be issued in total each 32ms)

Specifications

Attribute	Attribute Value
Manufacturer	Micron Technology Inc.
Product Category	Memory ICs
Series	-
Packaging	Tape & Reel (TR) Alternate Packaging
Package-Case	144-TFBGA
Operating-Temperature	0°C ~ 95°C (TC)
Interface	Parallel
Voltage-Supply	1.7 V ~ 1.9 V
Supplier-Device-Package	144-μBGA (18.5x11)
Memory Capacity	288M (16M x 18)
Memory-Type	RLDRAM 2
Speed	2.5ns
Format-Memory	RAM

Descriptions

DRAM Memory IC 288Mb (16M x 18) Parallel 400MHz 20ns 144-FBGA (18.5x11)

Quality MT49H16M18SJ-25:B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc. for sale

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